smd type transistors 2SC3356 features low noise and high gain. nf = 1.1 db typ., g a =11dbtyp.@v ce =10v,i c =7ma,f=1.0ghz high power gain. mag = 13 db typ. @v ce =10v,i c =20ma,f=1.0ghz absolute maximum ratings ta = 25 parameter symbol rating unit collector to base voltage v cbo 20 v collector to emitter voltage v ceo 12 v emitter to base voltage v ebo 3.0 v collector current (dc) i c 100 ma total power dissipation p tot 200 mw junction temperature t j 150 storage temperature range t stg -65 to +150 h fe classification marking r23 r24 r25 rank q r s h fe 50 100 80 160 125 250 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb =10v,i e =0ma 1.0 a emitter cutoff current i ebo v eb =1.0v,i c =0ma 1.0 a dc current gain * h fe v ce =10v,i c = 20 ma 50 120 250 insertion power gain s 21e 2 v ce =10v,i c =20ma,f=1ghz 11.5 db noise figure nf v ce =10v,i c = 7 ma, f = 1 ghz 1.1 2.0 db reverse transfer capacitance c re v cb =10v,i e = 0 ma, f = 1 mhz 0.55 1.0 pf transition frequency f t v ce =10v,i c =20ma 7 ghz *. pulse measurement: pw 350 s, duty cycle 2%. smd type ic smd type transistors smd type ic smd type transistors smd type transistors smd type transistors smd type ic smd type product specification sales@twtysemi.com 1 of 1 http://www.twtysemi.com 4008-318-123
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